K4B4G1646E-BCMA Product Technical Specifications
Categories | Memories |
Manufacturer | Samsung Electro |
Part Status | Obsolete |
Mounting | Surface Mount |
Lead Shape | Ball |
PCB changed | 96 |
DRAM Type | DDR3 SDRAM |
Chip Density (bit) | 4G |
Organization | 256Mx16 |
Number of Internal Banks | 8 |
Number of Words per Bank | 32M |
Number of Bits/Word (bit) | 16 |
Data Bus Width (bit) | 16 |
Maximum Clock Rate (MHz) | 1866 |
Maximum Access Time (ns) | 0.195 |
Address Bus Width (bit) | 18 |
Interface Type | SSTL_1.5 |
Minimum Operating Supply Voltage (V) | 1.425 |
Typical Operating Supply Voltage (V) | 1.5 |
Maximum Operating Supply Voltage (V) | 1.575 |
Operating Current (mA) | 131 |
Minimum Operating Temperature (°C) | 0 |
Maximum Operating Temperature (°C) | 95 |
Number of I/O Lines (bit) | 16 |
Standard Package Name | FBGA |
Pin Count | 96 |
Base Part Number | K4B4G1646E-BC data sheet |